The efficiency of the battery made of black silicon material reached 18.97%, which broke the highest level of batteries of the same type in the world.

A few days ago, Lu Ming's group at the Department of Light Science and Engineering at Fudan University prepared a pn junction by diffusing phosphorus on a p-type single-crystal Si(100), and used a chemical etching method to form porous black silicon in an n-type emitter. Black silicon materials produce high-efficiency solar cells.

Since the silicon nanocrystal has a higher bandgap than crystalline silicon, the open circuit voltage of the black silicon cell is also higher than that of the corresponding planar silicon cell. Moreover, the gradient bandgap structure of the emitter also suppresses the recombination of electrons and holes on the front surface. Due to the high absorbance in the short wavelength range, the photovoltaic response at short wavelengths is also good.

It is reported that this related research result has been published in the "Nanotechnology", also selected "Selection of nanotechnology." (Ma Haijun)

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